cqdd-8m cqdd-8n surface mount 8 amp silicon triac 600 thru 800 volts description: the central semiconductor cqdd-8m series type is an epoxy molded silicon triac designed for full wave ac control applications featuring gate triggering in all four (4) quadrants. marking: full part number maximum ratings: (t c =25c unless otherwise noted) symbol cqdd-8m cqdd-8n units peak repetitive off-state voltage v drm 600 800 v rms on-state current (t c =90c) i t(rms) 8.0 a peak one cycle surge, t=8.3ms i tsm 50 a i 2 t value for fusing, t=8.3m i 2 t 10 a 2 s peak gate power, tp=10s p gm 40 w average gate power dissipation p g(av) 1.0 w peak gate current, tp=10s i gm 4.0 a peak gate voltage, tp=10s v gm 16 v critical rate of rise of on-state current repetitive, f=60hz di/dt 10 a/s operating junction temperature t j -40 to +125 c storage temperature t stg -40 to +150 c thermal resistance ja 60 c/w thermal resistance jc 3.2 c/w electrical characteristics: (t c =25c unless otherwise noted) symbol test conditions min typ max units i drm rated v drm 10 a i drm rated v drm , t c =125c 500 a i gt v d =12v, r l =10 , quad i, ii, iii 4.5 20 ma i gt v d =12v, r l =10 , quad iv 17 50 ma i h i t =100ma 4.7 25 ma v gt v d =12v, r l =10 , quad i, ii, iii 0.95 1.50 v v gt v d =12v, r l =10 , quad iv 1.35 2.50 v v tm i tm =11a, tp=380s 1.30 1.75 v dv/dt v d = 2 / 3 v drm , r gk = , t c =125c 5.0 v/s d 2 pak case r2 (12-february 2010) www.centralsemi.com
cqdd-8m cqdd-8n surface mount 8 amp silicon triac 600 thru 800 volts lead code: 1) mt1 2) mt2 3) gate 4) mt2 marking: full part number d 2 pak case - mechanical outline www.centralsemi.com r2 (12-february 2010)
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